Inverse spin-valve-type magnetoresistance in spin engineered multilayered structures

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrically programmable magnetoresistance in multifunctional organic-based spin valve devices.

Information and communication technology (ICT) is now calling for solutions enabling lower power consumption, further miniaturization, and multifunctionality requiring the development of new device concepts and new materials. [ 1 ] One of the most fertile approaches to meet such demands is spintronics, which is now facing the challenge of evolving from the fi rst generation of devices that led ...

متن کامل

Spin-valve-like magnetoresistance in Mn2NiGa at room temperature.

Spin valves have revolutionized the field of magnetic recording and memory devices. Spin valves are generally realized in thin film heterostructures, where two ferromagnetic (FM) layers are separated by a nonmagnetic conducting layer. Here, we demonstrate spin-valve-like magnetoresistance at room temperature in a bulk ferrimagnetic material that exhibits a magnetic shape memory effect. The orig...

متن کامل

Domain-wall-induced magnetoresistance in pseudo-spin-valve/superconductor hybrid structures

A. K. Suszka,1,* F. S. Bergeret,2,3 and A. Berger1 1CIC nanoGUNE Consolider, Tolosa Hiribidea 76, E-20018 Donostia-San Sebastian, Spain 2Centro de Fı́sica de Materiales (CFM-MPC) Centro Mixto, CSIC-UPV/EHU, E-20018 Donostia-San Sebastian, Spain 3Donostia International Physics Center (DIPC), Manuel de Lardizabal 4, E-20018 Donostia-San Sebastian, Spain (Received 21 October 2011; revised manuscrip...

متن کامل

Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

We report an oscillation of the giant magnetoresistance GMR ratio as a function of Ru layer thickness in the CoFe/Cu/ CoFe/Ru/CoFe SAF/Cu/CoFe/IrMn dual spin valve SV structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling IEC . The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC,...

متن کامل

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical Review Letters

سال: 1994

ISSN: 0031-9007

DOI: 10.1103/physrevlett.72.408